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Scalable Gate Architecture for a One-Dimensional Array of Semiconductor Spin Qubits

Author(s): Zajac, DM; Hazard, TM; Mi, X; Nielsen, E; Petta, Jason R

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Abstract: We demonstrate a 12-quantum-dot device fabricated on an undoped Si/SiGe heterostructure as a proof of concept for a scalable, linear gate architecture for semiconductor quantum dots. The device consists of nine quantum dots in a linear array and three single-quantum-dot charge sensors. We show reproducible single-quantum-dot charging and orbital energies, with standard deviations less than 20% relative to the mean across the nine-dot array. The single-quantum-dot charge sensors have a charge sensitivity of 8.2 x 10(-4) e/root Hz and allow for the investigation of real-time charge dynamics. As a demonstration of the versatility of this device, we use single-shot readout to measure the spin-relaxation time T-1 = 170 ms at a magnetic field B = 1 T. By reconfiguring the device, we form two capacitively coupled double quantum dots and extract a mutual charging energy of 200 mu eV, which indicates that 50-GHz two-qubit gate-operation speeds are feasible.
Publication Date: Nov-2016
Electronic Publication Date: 28-Nov-2016
Citation: Zajac, DM, Hazard, TM, Mi, X, Nielsen, E, Petta, JR. (2016). Scalable Gate Architecture for a One-Dimensional Array of Semiconductor Spin Qubits. PHYSICAL REVIEW APPLIED, 6 (10.1103/PhysRevApplied.6.054013
DOI: doi:10.1103/PhysRevApplied.6.054013
ISSN: 2331-7019
Type of Material: Journal Article
Journal/Proceeding Title: PHYSICAL REVIEW APPLIED
Version: Final published version. Article is made available in OAR by the publisher's permission or policy.

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