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Nonadiabatic quantum control of a semiconductor charge qubit

Author(s): Dovzhenko, Y; Stehlik, J; Petersson, KD; Petta, Jason R; Lu, H; et al

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dc.contributor.authorDovzhenko, Y-
dc.contributor.authorStehlik, J-
dc.contributor.authorPetersson, KD-
dc.contributor.authorPetta, Jason R-
dc.contributor.authorLu, H-
dc.contributor.authorGossard, AC-
dc.date.accessioned2018-07-20T15:06:38Z-
dc.date.available2018-07-20T15:06:38Z-
dc.date.issued2011-10-15en_US
dc.identifier.citationDovzhenko, Y, Stehlik, J, Petersson, KD, Petta, JR, Lu, H, Gossard, AC. (2011). Nonadiabatic quantum control of a semiconductor charge qubit. PHYSICAL REVIEW B, 84 (10.1103/PhysRevB.84.161302en_US
dc.identifier.issn1098-0121-
dc.identifier.urihttp://arks.princeton.edu/ark:/88435/pr13t0v-
dc.description.abstractWe demonstrate multipulse quantum control of a single electron charge qubit. The qubit is manipulated by applying nonadiabatic voltage pulses to a surface depletion gate and readout is achieved using a quantum point-contact charge sensor. We observe Ramsey fringes in the excited-state occupation in response to a pi/2-pi/2 pulse sequence and extract T-2* similar to 60 ps away from the charge degeneracy point. Simulations suggest these results may be extended to implement a charge echo by reducing the interdot tunnel coupling and pulse rise time, thereby increasing the nonadiabaticity of the pulses.en_US
dc.language.isoen_USen_US
dc.relation.ispartofPHYSICAL REVIEW Ben_US
dc.rightsFinal published version. Article is made available in OAR by the publisher's permission or policy.en_US
dc.titleNonadiabatic quantum control of a semiconductor charge qubiten_US
dc.typeJournal Articleen_US
dc.identifier.doidoi:10.1103/PhysRevB.84.161302-
dc.date.eissued2011-10-07en_US
pu.type.symplectichttp://www.symplectic.co.uk/publications/atom-terms/1.0/journal-articleen_US

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