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Engineering Electronic Structure of a Two-Dimensional Topological Insulator Bi(111) Bilayer on Sb Nanofilms by Quantum Confinement Effect

Author(s): Bian, Guang; Wang, Zhengfei; Wang, Xiao-Xiong; Xu, Caizhi; Xu, SuYang; et al

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dc.contributor.authorBian, Guang-
dc.contributor.authorWang, Zhengfei-
dc.contributor.authorWang, Xiao-Xiong-
dc.contributor.authorXu, Caizhi-
dc.contributor.authorXu, SuYang-
dc.contributor.authorMiller, Thomas-
dc.contributor.authorHasan, M. Zahid-
dc.contributor.authorLiu, Feng-
dc.contributor.authorChiang, Tai-Chang-
dc.date.accessioned2019-08-29T17:07:05Z-
dc.date.available2019-08-29T17:07:05Z-
dc.date.issued2016-03-22en_US
dc.identifier.citationBian, Guang, Wang, Zhengfei, Wang, Xiao-Xiong, Xu, Caizhi, Xu, SuYang, Miller, Thomas, Hasan, M. Zahid, Liu, Feng, Chiang, Tai-Chang. (2016). Engineering Electronic Structure of a Two-Dimensional Topological Insulator Bi(111) Bilayer on Sb Nanofilms by Quantum Confinement Effect. ACS Nano, 10 (3), 3859 - 3864. doi:10.1021/acsnano.6b00987en_US
dc.identifier.issn1936-0851-
dc.identifier.urihttp://arks.princeton.edu/ark:/88435/pr13q81-
dc.description.abstractWe report on fabrication of a two-dimensional topological insulator-Bi(111) bilayer on Sb nanofilms via a sequential molecular beam epitaxy (MBE) growth technique. Our angle-resolved photoemission measurements demonstrate the evolution of the electronic band structure of the heterostructure as a function of the film thickness and reveal the existence of a two-dimensional spinful massless electron gas within the top Bi bilayer. Interestingly, Our first-principles calculation extrapolating the observed band structure shows that, by tuning down the thickness of the supporting Sb films into the quantum dimension regime, a pair of isolated topological edge states emerges in a partial energy gap at 0.32 eV above the Fermi level as a consequence of quantum confinement effect. Our results and methodology of fabricating nanoscale heterostructures establish the Bi bilayer/Sb heterostructure as a platform of great potential for both ultralow-energy-cost electronics and surface-based spintronics.en_US
dc.format.extent3859 - 3864en_US
dc.language.isoen_USen_US
dc.relation.ispartofACS Nanoen_US
dc.rightsAuthor's manuscripten_US
dc.titleEngineering Electronic Structure of a Two-Dimensional Topological Insulator Bi(111) Bilayer on Sb Nanofilms by Quantum Confinement Effecten_US
dc.typeJournal Articleen_US
dc.identifier.doidoi:10.1021/acsnano.6b00987-
dc.identifier.eissn1936-086X-
pu.type.symplectichttp://www.symplectic.co.uk/publications/atom-terms/1.0/journal-articleen_US

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