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Phonon-Assisted Gain in a Semiconductor Double Quantum Dot Maser

Author(s): Gullans, MJ; Liu, Y-Y; Stehlik, J; Petta, Jason R; Taylor, JM

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dc.contributor.authorGullans, MJ-
dc.contributor.authorLiu, Y-Y-
dc.contributor.authorStehlik, J-
dc.contributor.authorPetta, Jason R-
dc.contributor.authorTaylor, JM-
dc.date.accessioned2018-07-20T15:11:05Z-
dc.date.available2018-07-20T15:11:05Z-
dc.date.issued2015-05-15en_US
dc.identifier.citationGullans, MJ, Liu, Y-Y, Stehlik, J, Petta, JR, Taylor, JM. (2015). Phonon-Assisted Gain in a Semiconductor Double Quantum Dot Maser. PHYSICAL REVIEW LETTERS, 114 (10.1103/PhysRevLett.114.196802en_US
dc.identifier.issn0031-9007-
dc.identifier.urihttp://arks.princeton.edu/ark:/88435/pr13d5c-
dc.description.abstractWe develop a microscopic model for the recently demonstrated double-quantum-dot maser. In characterizing the gain of this device we find that, in addition to the direct stimulated emission of photons, there is a large contribution from the simultaneous emission of a photon and a phonon, i.e., the phonon sideband. We show that this phonon-assisted gain typically dominates the overall gain, which leads to masing. Recent experimental data are well fit with our model.en_US
dc.language.isoen_USen_US
dc.relation.ispartofPHYSICAL REVIEW LETTERSen_US
dc.rightsAuthor's manuscripten_US
dc.titlePhonon-Assisted Gain in a Semiconductor Double Quantum Dot Maseren_US
dc.typeJournal Articleen_US
dc.identifier.doidoi:10.1103/PhysRevLett.114.196802-
dc.date.eissued2015-05-13en_US
dc.identifier.eissn1079-7114-
pu.type.symplectichttp://www.symplectic.co.uk/publications/atom-terms/1.0/journal-articleen_US

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