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Charge Relaxation in a Single-Electron Si/SiGe Double Quantum Dot

Author(s): Wang, K; Payette, C; Dovzhenko, Y; Deelman, PW; Petta, Jason R

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Abstract: We measure the interdot charge relaxation time T-1 of a single electron trapped in an accumulation mode Si/SiGe double quantum dot. The energy level structure of the charge qubit is determined using photon assisted tunneling, which reveals the presence of a low-lying excited state. We systematically measure T-1 as a function of detuning and interdot tunnel coupling and show that it is tunable over four orders of magnitude, with a maximum of 45 mu s for our device configuration.
Publication Date: 26-Jul-2013
Electronic Publication Date: 22-Jul-2013
Citation: Wang, K, Payette, C, Dovzhenko, Y, Deelman, PW, Petta, JR. (2013). Charge Relaxation in a Single-Electron Si/SiGe Double Quantum Dot. PHYSICAL REVIEW LETTERS, 111 (10.1103/PhysRevLett.111.046801
DOI: doi:10.1103/PhysRevLett.111.046801
ISSN: 0031-9007
Type of Material: Journal Article
Journal/Proceeding Title: PHYSICAL REVIEW LETTERS
Version: Final published version. Article is made available in OAR by the publisher's permission or policy.

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