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Gallium phosphide as a new material for anodically bonded atomic sensors

Author(s): Dural, Nezih; Romalis, Michael V

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dc.contributor.authorDural, Nezih-
dc.contributor.authorRomalis, Michael V-
dc.date.accessioned2018-07-20T15:09:44Z-
dc.date.available2018-07-20T15:09:44Z-
dc.date.issued2014-08en_US
dc.identifier.citationDural, Nezih, Romalis, Michael V. (2014). Gallium phosphide as a new material for anodically bonded atomic sensors. APL MATERIALS, 2 (10.1063/1.4891375en_US
dc.identifier.issn2166-532X-
dc.identifier.urihttp://arks.princeton.edu/ark:/88435/pr1295w-
dc.description.abstractMiniaturized atomic sensors are often fabricated using anodic bonding of silicon and borosilicate glass. Here we describe a technique for fabricating anodically bonded alkali-metal cells using GaP and Pyrex. GaP is a non-birefringent semiconductor that is transparent at alkali-metal resonance wavelengths, allowing new sensor geometries. GaP also has a higher thermal conductivity and lower He permeability than borosilicate glass and can be anodically bonded below 200 degrees C, which can also be advantageous in other vacuum sealing applications. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.en_US
dc.language.isoen_USen_US
dc.relation.ispartofAPL MATERIALSen_US
dc.rightsFinal published version. This is an open access article.en_US
dc.titleGallium phosphide as a new material for anodically bonded atomic sensorsen_US
dc.typeJournal Articleen_US
dc.identifier.doidoi:10.1063/1.4891375-
dc.date.eissued2014-08-06en_US
pu.type.symplectichttp://www.symplectic.co.uk/publications/atom-terms/1.0/journal-articleen_US

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