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Highly tunable formation of nitrogen-vacancy centers via ion implantation

Author(s): Sangtawesin, S; Brundage, TO; Atkins, ZJ; Petta, Jason R

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Abstract: We demonstrate highly tunable formation of nitrogen-vacancy (NV) centers using 20 keV 15 N+ ion implantation through arrays of high-resolution apertures fabricated with electron beam lithography. By varying the aperture diameters from 80 to 240 nm, as well as the average ion fluences from 5 x 10(10) to 2 x 10(11) ions/cm(2), we can control the number of ions per aperture. We analyze the photoluminescence on multiple sites with different implantation parameters and obtain ion-to-NV conversion yields of 6%-7%, consistent across all ion fluences. The implanted NV centers have spin dephasing times T-2* similar to 3 mu s, comparable to naturally occurring NV centers in high purity diamond with natural abundance C-13. With this technique, we can deterministically control the population distribution of NV centers in each aperture, allowing for the study of single or coupled NV centers and their integration into photonic structures. (C) 2014 AIP Publishing LLC.
Publication Date: 11-Aug-2014
Electronic Publication Date: Aug-2014
Citation: Sangtawesin, S, Brundage, TO, Atkins, ZJ, Petta, JR. (2014). Highly tunable formation of nitrogen-vacancy centers via ion implantation. APPLIED PHYSICS LETTERS, 105 (10.1063/1.4892971
DOI: doi:10.1063/1.4892971
ISSN: 0003-6951
EISSN: 1077-3118
Type of Material: Journal Article
Journal/Proceeding Title: APPLIED PHYSICS LETTERS
Version: Author's manuscript

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