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Magnetotransport studies of mobility limiting mechanisms in undoped Si/SiGe heterostructures

Author(s): Mi, X; Hazard, TM; Payette, C; Wang, K; Zajac, DM; et al

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dc.contributor.authorMi, X-
dc.contributor.authorHazard, TM-
dc.contributor.authorPayette, C-
dc.contributor.authorWang, K-
dc.contributor.authorZajac, DM-
dc.contributor.authorCady, JV-
dc.contributor.authorPetta, Jason R-
dc.identifier.citationMi, X, Hazard, TM, Payette, C, Wang, K, Zajac, DM, Cady, JV, Petta, JR. (2015). Magnetotransport studies of mobility limiting mechanisms in undoped Si/SiGe heterostructures. PHYSICAL REVIEW B, 92 (10.1103/PhysRevB.92.035304en_US
dc.description.abstractWe perform detailed magnetotransport studies on two-dimensional electron gases (2DEGs) formed in undoped Si/SiGe heterostructures in order to identify the electron mobility limiting mechanisms. By analyzing data from 26 different heterostructures, we observe a strong correlation between the background oxygen concentration in the Si quantum well and the maximum mobility. The highest-quality wafer supports a 2DEG with mobility mu = 160 000 cm(2)/Vs at a density n = 2.17x10(11)/cm(2) and exhibits a metal-to-insulator transition at a critical density n(c) = 0.46x10(11)/cm(2). We extract a valley splitting Delta v similar to 150 mu eV at a magnetic field B = 1.8 T. These results provide evidence that undoped Si/SiGe heterostructures are suitable for the fabrication of few-electron quantum dots.en_US
dc.relation.ispartofPHYSICAL REVIEW Ben_US
dc.rightsFinal published version. Article is made available in OAR by the publisher's permission or policy.en_US
dc.titleMagnetotransport studies of mobility limiting mechanisms in undoped Si/SiGe heterostructuresen_US
dc.typeJournal Articleen_US

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