To refer to this page use:
|Abstract:||We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity. A quality factor Q = 5400 is achieved by selectively etching away regions of the quantum well and by reducing photon losses through low-pass filtering of the gate bias lines. Homodyne measurements of the cavity transmission reveal DQD charge stability diagrams and a charge-cavity coupling rate g(c)/2 pi = 23 MHz. These measurements indicate that electrons trapped in a Si DQD can be effectively coupled to microwave photons, potentially enabling coherent electron-photon interactions in silicon. Published by AIP Publishing.|
|Electronic Publication Date:||23-Jan-2017|
|Citation:||Mi, X, Cady, JV, Zajac, DM, Stehlik, J, Edge, LF, Petta, JR. (2017). Circuit quantum electrodynamics architecture for gate-defined quantum dots in silicon. APPLIED PHYSICS LETTERS, 110 (10.1063/1.4974536|
|Type of Material:||Journal Article|
|Journal/Proceeding Title:||APPLIED PHYSICS LETTERS|
|Version:||Final published version. Article is made available in OAR by the publisher's permission or policy.|
Items in OAR@Princeton are protected by copyright, with all rights reserved, unless otherwise indicated.