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|Abstract:||We report the characterization of Bi2Te2Se crystals obtained by the modified Bridgman and Bridgman-Stockbarger crystal-growth techniques. X-ray-diffraction study confirms an ordered Se-Te distribution in the inner and outer chalcogen layers, respectively, with a small amount of mixing. The crystals displaying high resistivity (>1 Omega cm) and low carrier concentration (similar to 5 x 10(16)/cm(3)) at 4 K were found in the central region of the long Bridgman-Stockbarger crystal, which we attribute to very small differences in defect density along the length of the crystal rod. Analysis of the temperature-dependent resistivities and Hall coefficients reveals the possible underlying origins of the donors and acceptors in this phase.|
|Electronic Publication Date:||15-Dec-2011|
|Citation:||Jia, Shuang, Ji, Huiwen, Climent-Pascual, E, Fuccillo, MK, Charles, ME, Xiong, Jun, Ong, NP, Cava, RJ. (2011). Low-carrier-concentration crystals of the topological insulator Bi2Te2Se. PHYSICAL REVIEW B, 84 (10.1103/PhysRevB.84.235206|
|Type of Material:||Journal Article|
|Journal/Proceeding Title:||PHYSICAL REVIEW B|
|Version:||Final published version. This is an open access article.|
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