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|Abstract:||Employing ab initio electronic structure calculations, we predict that trigonal tellurium consisting of weakly interacting helical chains undergoes a trivial insulator to strong topological insulator (metal) transition under shear (hydrostatic or uniaxial) strain. The transition is demonstrated by examining the strain evolution of the band structure, the topological Z(2) invariant and the concomitant band inversion. The underlying mechanism is the depopulation of the lone-pair orbitals associated with the valence band via proper strain engineering. Thus, Te becomes the prototype of a novel family of chiral-based three-dimensional topological insulators with important implications in spintronics, magneto-optics, and thermoelectrics. DOI: 10.1103/PhysRevLett.110.176401|
|Electronic Publication Date:||24-Apr-2013|
|Citation:||Agapito, Luis A, Kioussis, Nicholas, Goddard, William A, Ong, NP. (2013). Novel Family of Chiral-Based Topological Insulators: Elemental Tellurium under Strain. PHYSICAL REVIEW LETTERS, 110 (10.1103/PhysRevLett.110.176401|
|Type of Material:||Journal Article|
|Journal/Proceeding Title:||PHYSICAL REVIEW LETTERS|
|Version:||Final published version. This is an open access article.|
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