# Heitler-London model for acceptor-acceptor interactions in doped semiconductors

## Author(s): Durst, AC; Castoria, KE; Bhatt, Ravindra N

To refer to this page use: http://arks.princeton.edu/ark:/88435/pr1595x
DC FieldValueLanguage
dc.contributor.authorDurst, AC-
dc.contributor.authorCastoria, KE-
dc.contributor.authorBhatt, Ravindra N-
dc.date.accessioned2018-07-20T15:07:27Z-
dc.date.available2018-07-20T15:07:27Z-
dc.date.issued2017-10-26en_US
dc.identifier.citationDurst, AC, Castoria, KE, Bhatt, RN. (2017). Heitler-London model for acceptor-acceptor interactions in doped semiconductors. Physical Review B, 96 (10.1103/PhysRevB.96.155208en_US
dc.identifier.urihttp://arks.princeton.edu/ark:/88435/pr1595x-
dc.description.abstractThe interactions between acceptors in semiconductors are often treated in qualitatively the same manner as those between donors. Acceptor wave functions are taken to be approximately hydrogenic and the standard hydrogen molecule Heitler-London model is used to describe acceptor-acceptor interactions. But due to valence band degeneracy and spin-orbit coupling, acceptor states can be far more complex than those of hydrogen atoms, which brings into question the validity of this approximation. To address this issue, we develop an acceptor-acceptor Heitler-London model using single-acceptor wave functions of the form proposed by Baldereschi and Lipari, which more accurately capture the physics of the acceptor states. We calculate the resulting acceptor-pair energy levels and find, in contrast to the two-level singlet-triplet splitting of the hydrogen molecule, a rich ten-level energy spectrum. Our results, computed as a function of interacceptor distance and spin-orbit coupling strength, suggest that acceptor-acceptor interactions can be qualitatively different from donor-donor interactions, and should therefore be relevant to the control of two-qubit interactions in acceptor-based qubit implementations, as well as the magnetic properties of a variety of p-doped semiconductor systems. Further insight is drawn by fitting numerical results to closed-form energy-level expressions obtained via an acceptor-acceptor Hubbard model.en_US
dc.language.isoen_USen_US
dc.relation.ispartofPhysical Review Ben_US
dc.rightsAuthor's manuscripten_US
dc.titleHeitler-London model for acceptor-acceptor interactions in doped semiconductorsen_US
dc.typeJournal Articleen_US
dc.identifier.doidoi:10.1103/PhysRevB.96.155208-
dc.date.eissued2017-10-26en_US
pu.type.symplectichttp://www.symplectic.co.uk/publications/atom-terms/1.0/journal-articleen_US

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