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Large-Chern-Number Quantum Anomalous Hall Effect in Thin-Film Topological Crystalline Insulators

Author(s): Fang, Chen; Gilbert, Matthew J; Bernevig, Bogdan A

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dc.contributor.authorFang, Chen-
dc.contributor.authorGilbert, Matthew J-
dc.contributor.authorBernevig, Bogdan A-
dc.date.accessioned2020-10-30T19:20:39Z-
dc.date.available2020-10-30T19:20:39Z-
dc.date.issued2014-01-27en_US
dc.identifier.citationFang, Chen, Gilbert, Matthew J, Bernevig, B Andrei. (2014). Large-Chern-Number Quantum Anomalous Hall Effect in Thin-Film Topological Crystalline Insulators. PHYSICAL REVIEW LETTERS, 112 (10.1103/PhysRevLett.112.046801en_US
dc.identifier.issn0031-9007-
dc.identifier.urihttp://arks.princeton.edu/ark:/88435/pr1x82w-
dc.description.abstractWe theoretically predict that thin-film topological crystalline insulators can host various quantum anomalous Hall phases when doped by ferromagnetically ordered dopants. Any Chern number between +/-4 can, in principle, be reached as a result of the interplay between (a) the induced Zeeman field, depending on the magnetic doping concentration, (b) the structural distortion, either intrinsic or induced by a piezoelectric material through the proximity effect, and (c) the thickness of the thin film. We propose a heterostructure to realize quantum anomalous Hall phases with Chern numbers that can be tuned by electric fields.en_US
dc.language.isoen_USen_US
dc.relation.ispartofPHYSICAL REVIEW LETTERSen_US
dc.rightsFinal published version. Article is made available in OAR by the publisher's permission or policy.en_US
dc.titleLarge-Chern-Number Quantum Anomalous Hall Effect in Thin-Film Topological Crystalline Insulatorsen_US
dc.typeJournal Articleen_US
dc.identifier.doidoi:10.1103/PhysRevLett.112.046801-
dc.identifier.eissn1079-7114-
pu.type.symplectichttp://www.symplectic.co.uk/publications/atom-terms/1.0/journal-articleen_US

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