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|Abstract:||We theoretically predict that thin-film topological crystalline insulators can host various quantum anomalous Hall phases when doped by ferromagnetically ordered dopants. Any Chern number between +/-4 can, in principle, be reached as a result of the interplay between (a) the induced Zeeman field, depending on the magnetic doping concentration, (b) the structural distortion, either intrinsic or induced by a piezoelectric material through the proximity effect, and (c) the thickness of the thin film. We propose a heterostructure to realize quantum anomalous Hall phases with Chern numbers that can be tuned by electric fields.|
|Citation:||Fang, Chen, Gilbert, Matthew J, Bernevig, B Andrei. (2014). Large-Chern-Number Quantum Anomalous Hall Effect in Thin-Film Topological Crystalline Insulators. PHYSICAL REVIEW LETTERS, 112 (10.1103/PhysRevLett.112.046801|
|Type of Material:||Journal Article|
|Journal/Proceeding Title:||PHYSICAL REVIEW LETTERS|
|Version:||Final published version. Article is made available in OAR by the publisher's permission or policy.|
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