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Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

Author(s): Weis, CD; Lo, CC; Lang, V; Tyryshkin, AM; George, RE; et al

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DC FieldValueLanguage
dc.contributor.authorWeis, CD-
dc.contributor.authorLo, CC-
dc.contributor.authorLang, V-
dc.contributor.authorTyryshkin, AM-
dc.contributor.authorGeorge, RE-
dc.contributor.authorYu, KM-
dc.contributor.authorBokor, J-
dc.contributor.authorLyon, Stephen A-
dc.contributor.authorMorton, JJL-
dc.contributor.authorSchenkel, T-
dc.date.accessioned2021-10-08T20:15:54Z-
dc.date.available2021-10-08T20:15:54Z-
dc.date.issued2012-4-24en_US
dc.identifier.citationWeis, CD, Lo, CC, Lang, V, Tyryshkin, AM, George, RE, Yu, KM, Bokor, J, Lyon, SA, Morton, JJL, Schenkel, T. (2012). Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28. Applied Physics Letters, 100 (10.1063/1.4704561en_US
dc.identifier.urihttp://arks.princeton.edu/ark:/88435/pr1x283-
dc.description.abstractWe have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B pp = 12 μT) and long spin coherence times (T 2 = 0. 7 ms, at temperature T = 8 K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in siliconen_US
dc.language.isoen_USen_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.rightsAuthor's manuscripten_US
dc.titleElectrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28en_US
dc.typeJournal Articleen_US
dc.identifier.doidoi:10.1063/1.4704561-
dc.date.eissued2012-4-24en_US
pu.type.symplectichttp://www.symplectic.co.uk/publications/atom-terms/1.0/journal-articleen_US

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