To refer to this page use:
|Abstract:||We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B pp = 12 μT) and long spin coherence times (T 2 = 0. 7 ms, at temperature T = 8 K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon|
|Electronic Publication Date:||24-Apr-2012|
|Citation:||Weis, CD, Lo, CC, Lang, V, Tyryshkin, AM, George, RE, Yu, KM, Bokor, J, Lyon, SA, Morton, JJL, Schenkel, T. (2012). Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28. Applied Physics Letters, 100 (10.1063/1.4704561|
|Type of Material:||Journal Article|
|Journal/Proceeding Title:||Applied Physics Letters|
Items in OAR@Princeton are protected by copyright, with all rights reserved, unless otherwise indicated.