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A gap-protected zero-Hall effect state in the quantum limit of the non-symmorphic metal KHgSb

Author(s): Liang, Sihang; Kushwaha, Satya; Gao, Tong; Hirschberger, Max; Li, Jian; et al

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Abstract: A recurring theme in topological matter is the protection of unusual electronic states by symmetry, for example, protection of the surface states in Z(2) topological insulators by time-reversal symmetry(1-3). Recently, interest has turned to unusual surface states in the large class of non-symmorphic materials(4-12). In particular, KHgSb is predicted to exhibit double quantum spin Hall states(10). Here we report measurements of the Hall conductivity in KHgSb in a strong magnetic field B. In the quantum limit, the Hall conductivity is observed to fall exponentially to zero, but the diagonal conductivity is finite. A large gap protects this unusual zero-Hall state. We theoretically propose that, in this quantum limit, the chemical potential drops into the bulk gap, intersecting equal numbers of right- and left-moving quantum spin Hall surface modes to produce the zero-Hall state. The zero-Hall state illustrates how topological protection in a non-symmorphic material with glide symmetry may lead to highly unusual transport phenomena.
Publication Date: 4-Mar-2019
Citation: Liang, Sihang, Kushwaha, Satya, Gao, Tong, Hirschberger, Max, Li, Jian, Wang, Zhijun, Stolze, Karoline, Skinner, Brian, Bernevig, BA, Cava, RJ, Ong, NP. (2019). A gap-protected zero-Hall effect state in the quantum limit of the non-symmorphic metal KHgSb. NATURE MATERIALS, 18 (443+ - 443+. doi:10.1038/s41563-019-0303-x
DOI: doi:10.1038/s41563-019-0303-x
ISSN: 1476-1122
EISSN: 1476-4660
Pages: 443+ - 443+
Type of Material: Journal Article
Journal/Proceeding Title: NATURE MATERIALS
Version: Author's manuscript



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