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Local electronic and magnetic properties of the doped topological insulators Bi2Se3:Ca and Bi2Te3:Mn investigated using ion-implanted 8Li 𝛽-NMR

Author(s): McFadden, Ryan ML; Chatzichristos, Aris; Cortie, David L; Fujimoto, Derek; Hor, Yew San; et al

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Abstract: We report 𝛽−NMR measurements in Bi2⁢Se3:Ca and Bi2⁢Te3:Mn single crystals using 8Li+ implanted to depths on the order of 100 nm. Above ∼200K, spin-lattice relaxation reveals diffusion of 8Li+, with activation energies of ∼0.4⁢eV (∼0.2⁢eV) in Bi2⁢Se3:Ca (Bi2⁢Te3:Mn). At lower temperatures, the NMR properties are those of a heavily doped semiconductor in the metallic limit, with Korringa relaxation and a small, negative, temperature-dependent Knight shift in Bi2⁢Se3:Ca. From this, we make a detailed comparison with the isostructural tetradymite Bi2⁢Te2⁢Se [McFadden et al., Phys. Rev. B 99, 125201 (2019)]. In the magnetic Bi2⁢Te3:Mn, the effects of the dilute Mn moments predominate, but remarkably the 8Li+ signal is not wiped out through the magnetic transition at 13 K, with a prominent critical peak in the spin-lattice relaxation that is suppressed in a high applied field. This detailed characterization of the 8Li+ NMR response is an important step toward using depth-resolved 𝛽−NMR to study the low-energy properties of the chiral topological surface state in the Bi2⁢Ch3 tetradymite topological insulator.
Publication Date: 28-Dec-2020
Electronic Publication Date: 28-Dec-2020
Citation: McFadden, Ryan ML, Chatzichristos, Aris, Cortie, David L, Fujimoto, Derek, Hor, Yew San, Ji, Huiwen, Karner, Victoria L, Kiefl, Robert F, Levy, CD Philip, Li, Ruohong, McKenzie, Iain, Morris, Gerald D, Pearson, Matthew R, Stachura, Monika, Cava, Robert J, MacFarlane, W Andrew. Local electronic and magnetic properties of the doped topological insulators Bi2Se3:Ca and Bi2Te3:Mn investigated using ion-implanted 8Li 𝛽-NMR. Physical Review B, 102 (23), 10.1103/physrevb.102.235206
DOI: doi:10.1103/physrevb.102.235206
ISSN: 2469-9950
EISSN: 2469-9969
Language: en
Type of Material: Journal Article
Journal/Proceeding Title: Physical Review B
Version: Author's manuscript



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