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Tuning of Fermi contour anisotropy in GaAs (001) 2D holes via strain

Author(s): Jo, I; Mueed, MA; Pfeiffer, LN; West, KW; Baldwin, KW; et al

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dc.contributor.authorJo, I-
dc.contributor.authorMueed, MA-
dc.contributor.authorPfeiffer, LN-
dc.contributor.authorWest, KW-
dc.contributor.authorBaldwin, KW-
dc.contributor.authorWinkler, R-
dc.contributor.authorPadmanabhan, M-
dc.contributor.authorShayegan, Mansour-
dc.date.accessioned2021-10-08T20:17:26Z-
dc.date.available2021-10-08T20:17:26Z-
dc.date.issued2017en_US
dc.identifier.citationJo, I, Mueed, MA, Pfeiffer, LN, West, KW, Baldwin, KW, Winkler, R, Padmanabhan, M, Shayegan, M. (2017). Tuning of Fermi contour anisotropy in GaAs (001) 2D holes via strain. Applied Physics Letters, 110 (10.1063/1.4984954en_US
dc.identifier.urihttp://arks.princeton.edu/ark:/88435/pr1986b-
dc.description.abstractWe demonstrate tuning of the Fermi contour anisotropy of two-dimensional (2D) holes in a symmetric GaAs (001) quantum well via the application of in-plane strain. The ballistic transport of high-mobility hole carriers allows us to measure the Fermi wavevector of 2D holes via commensurability oscillations as a function of strain. Our results show that a small amount of in-plane strain, on the order of 10-4, can induce significant Fermi wavevector anisotropy as large as 3.3, equivalent to a mass anisotropy of 11 in a parabolic band. Our method to tune the anisotropy in situ provides a platform to study the role of anisotropy in phenomena such as the fractional quantum Hall effect and composite fermions in interacting 2D systems.en_US
dc.language.isoen_USen_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.rightsAuthor's manuscripten_US
dc.titleTuning of Fermi contour anisotropy in GaAs (001) 2D holes via strainen_US
dc.typeJournal Articleen_US
dc.identifier.doidoi:10.1063/1.4984954-
pu.type.symplectichttp://www.symplectic.co.uk/publications/atom-terms/1.0/journal-articleen_US

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