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Engineering Electronic Structure of a Two-Dimensional Topological Insulator Bi(111) Bilayer on Sb Nanofilms by Quantum Confinement Effect

Author(s): Bian, Guang; Wang, Zhengfei; Wang, Xiao-Xiong; Xu, Caizhi; Xu, SuYang; et al

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Abstract: We report on fabrication of a two-dimensional topological insulator-Bi(111) bilayer on Sb nanofilms via a sequential molecular beam epitaxy (MBE) growth technique. Our angle-resolved photoemission measurements demonstrate the evolution of the electronic band structure of the heterostructure as a function of the film thickness and reveal the existence of a two-dimensional spinful massless electron gas within the top Bi bilayer. Interestingly, Our first-principles calculation extrapolating the observed band structure shows that, by tuning down the thickness of the supporting Sb films into the quantum dimension regime, a pair of isolated topological edge states emerges in a partial energy gap at 0.32 eV above the Fermi level as a consequence of quantum confinement effect. Our results and methodology of fabricating nanoscale heterostructures establish the Bi bilayer/Sb heterostructure as a platform of great potential for both ultralow-energy-cost electronics and surface-based spintronics.
Publication Date: 22-Mar-2016
Citation: Bian, Guang, Wang, Zhengfei, Wang, Xiao-Xiong, Xu, Caizhi, Xu, SuYang, Miller, Thomas, Hasan, M. Zahid, Liu, Feng, Chiang, Tai-Chang. (2016). Engineering Electronic Structure of a Two-Dimensional Topological Insulator Bi(111) Bilayer on Sb Nanofilms by Quantum Confinement Effect. ACS Nano, 10 (3), 3859 - 3864. doi:10.1021/acsnano.6b00987
DOI: doi:10.1021/acsnano.6b00987
ISSN: 1936-0851
EISSN: 1936-086X
Pages: 3859 - 3864
Type of Material: Journal Article
Journal/Proceeding Title: ACS Nano
Version: Author's manuscript



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