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|Abstract:||We report on fabrication of a two-dimensional topological insulator-Bi(111) bilayer on Sb nanofilms via a sequential molecular beam epitaxy (MBE) growth technique. Our angle-resolved photoemission measurements demonstrate the evolution of the electronic band structure of the heterostructure as a function of the film thickness and reveal the existence of a two-dimensional spinful massless electron gas within the top Bi bilayer. Interestingly, Our first-principles calculation extrapolating the observed band structure shows that, by tuning down the thickness of the supporting Sb films into the quantum dimension regime, a pair of isolated topological edge states emerges in a partial energy gap at 0.32 eV above the Fermi level as a consequence of quantum confinement effect. Our results and methodology of fabricating nanoscale heterostructures establish the Bi bilayer/Sb heterostructure as a platform of great potential for both ultralow-energy-cost electronics and surface-based spintronics.|
|Citation:||Bian, Guang, Wang, Zhengfei, Wang, Xiao-Xiong, Xu, Caizhi, Xu, SuYang, Miller, Thomas, Hasan, M. Zahid, Liu, Feng, Chiang, Tai-Chang. (2016). Engineering Electronic Structure of a Two-Dimensional Topological Insulator Bi(111) Bilayer on Sb Nanofilms by Quantum Confinement Effect. ACS Nano, 10 (3), 3859 - 3864. doi:10.1021/acsnano.6b00987|
|Pages:||3859 - 3864|
|Type of Material:||Journal Article|
|Journal/Proceeding Title:||ACS Nano|
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