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Abstract
The success of black phosphorus in fast electronic and photonic devices is hindered by its rapid degradation in the presence of oxygen. Orthorhombic tin selenide is a representative of group IV-VI binary compounds that are robust and isoelectronic and share the same structure with black phosphorus. We measure the band structure of SnSe and find highly anisotropic valence bands that form several valleys having fast dispersion within the layers and negligible dispersion across. This is exactly the band structure desired for efficient thermoelectric generation where SnSe has shown great promise.
- Revised 29 September 2017
- Received 6 July 2017
DOI:https://doi.org/10.1103/PhysRevLett.120.156403
© 2018 American Physical Society
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Condensed Matter & Materials Physics
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